Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride

A process used during said formation of a semiconductor device, comprising:

• placing a plurality of semiconductor wafers each having a surface in a common location and, while said plurality of semiconductor wafers are in said common location:
• heating said wafers to a temperature of between about 300° C. and about 550° C.;
• introducing at least one of ammonia and hydrazine proximate a surface of each of said plurality of wafers;
• introducing an aluminum nitride precursor proximate said surface of each of said plurality of wafers;
• and
• simultaneously forming a layer comprising aluminum nitride over said surface of each said wafer.

A process used to form an electronic device having a film comprising aluminum nitride, the process comprising:

• placing at least two wafers in a common location and, while said at least two wafers are in said common location:
• increasing a temperature of said wafers to a deposition temperature;
• introducing an aluminum nitride precursor proximate a surface of each of said at least two wafers;
• at about said deposition temperature, forming a layer comprising aluminum nitride from said aluminum nitride precursor over a surface of each wafer;
• and
• subsequent to forming said layer comprising aluminum nitride, annealing said layer at a temperature equal to or greater than said deposition temperature in an atmosphere comprising at least one of H2, N2, and NH3 at a pressure of between about 200 millitorr and 25 atmospheres.

A process used to form a conductive layer comprising titanium aluminum nitride, comprising:

• placing at least two wafers in a common location and, while said at least two wafers are in said common location:
• increasing a temperature of each of said wafers;
• introducing a precursor comprising at least one of trimethylethylenediamine tris(dimethylamino)titanium, tetrakisdiethylaminotitanium, and tetrakisdimethylaminotitanium proximate a surface of each of said wafers;
• and
• forming a layer comprising titanium aluminum nitride over said surface of each said wafer from said precursor.

A process for forming a field emitter device, comprising:

• forming an array of emitter tips on each of a plurality of semiconductor wafers;
• placing said plurality of wafers in a common location and, while said plurality of wafers are in said common location:
• increasing a temperature of said plurality of wafers;
• introducing an aluminum nitride precursor proximate a surface of each of said plurality of wafers;
• and
• forming a layer comprising aluminum nitride from said aluminum nitride precursor over each said array of each said wafer.

A process used during the formation of a field emitter device, comprising:

• forming an array of emitter tips on each of at least two semiconductor wafer assemblies;
• placing said at least two semiconductor wafer assemblies in a common location and, while said at least two wafer assemblies are in said common location:
• increasing a temperature of said wafer assemblies;
• introducing an aluminum nitride precursor proximate a surface of each of said at least two wafer assembly;
• and
• forming a layer comprising aluminum nitride from said aluminum nitride precursor over said array of emitter tips on said surface of each of said at least two semiconductor wafer assemblies.

A process used during the formation of a semiconductor device comprising:

• providing a plurality of semiconductor wafer assemblies, each semiconductor wafer assembly of said plurality comprising an array of emitter tips;
• placing said plurality of semiconductor wafer assemblies in a common location and, while said plurality of wafer assemblies are in said common location:
• heating said wafer assemblies to a temperature of between about 300° C. and about 550° C.;
• introducing at least one of ammonia and hydrazine proximate each said array of emitter tips of each of said plurality of wafer assemblies;
• introducing an aluminum nitride precursor proximate each said array of emitter tips of each of said plurality of wafer assemblies;
• and
• simultaneously forming a layer comprising aluminum nitride over said array of emitter tips on each of said plurality of semiconductor wafer assemblies.

A process used to form an electronic device having an array of emitter tips, said process comprising:

• providing at least two semiconductor wafer assemblies, each assembly comprising a semiconductor wafer and an array of emitter tips;
• placing said at least two wafer assemblies in a common location and, while said at least two wafer assemblies are in said common location:
• increasing a temperature of said wafer assemblies to a deposition temperature;
• introducing an aluminum nitride precursor proximate said emitter tip array of each of said at least two wafer assemblies;
• at about said deposition temperature, forming a layer comprising aluminum nitride from said aluminum nitride precursor over said array of emitter tips of each said at least two semiconductor wafer assemblies;
• and
• subsequent to said formation of said layer comprising aluminum nitride, annealing said layer at a temperature equal to or greater than said deposition temperature in an atmosphere comprising at least one of H2, N2, and NH3 at a pressure of between about 200 millitorr and 25 atmospheres.

A process used during the formation of an electronic device, said process comprising:

• providing at least two semiconductor wafer assemblies, each assembly comprising an array of field emitter display emitter tips;
• placing said at least two wafer assemblies in a common location and, while said at least two wafer assemblies are in said common location:
• increasing a temperature of said wafer assemblies;
• introducing a precursor comprising at least one of trimethylethylenediamine tris(dimethylamino)titanium, tetrakisdiethylaminotitanium, and tetrakisdimethylaminotitanium;
• and
• forming a layer comprising titanium aluminum nitride from said precursor over each said array of each said assembly.