Method and apparatus for manufacturing semiconductor devices

A semiconductor manufacturing method including a film-forming process in which ruthenium films or ruthenium oxide films are formed according to a thermal CVD method on a substrate by using a gas vaporized from a ruthenium liquid material and an oxygen-containing gas, said film-forming process comprising:

• initially forming a first thin film of ruthenium or ruthenium oxide on said substrate under first film-forming conditions;
• and
• forming a second thin film of ruthenium or ruthenium oxide on said first thin film under second film-forming conditions, different from said first film-forming conditions, said second thin film having a thickness greater than that of said first thin film,
• wherein said initially forming a first thin film and said forming a second thin film are performed continuously in one and the same reaction chamber.

A semiconductor manufacturing method including a film-forming process in which ruthenium films or ruthenium oxide films are formed on a substrate according to a thermal CVD method by using a gas vaporized from a ruthenium liquid material and an oxygen-containing gas, said film-forming process comprising:

• initially forming a first thin film of ruthenium or ruthenium oxide on said substrate under first film-forming conditions;
• and
• forming a second thin film of ruthenium or ruthenium oxide on said first thin film under second film-forming conditions, different from said first film-forming conditions, said second thin film having a thickness greater than that of said first thin film,
• wherein said initially forming a first thin film and said forming a second thin film are performed continuously, without any intervening interruption.