Method of depositing a thick titanium nitride film

A method of depositing a composite titanium nitride (TiN) layer upon a substrate, comprising the steps of:

• (a) forming a first TiN layer on the substrate using a reaction between NH3 and TiCl4 at a first NH3:TiCl4 ratio greater than about 40, wherein the first TiN layer has primarily <111> and <200> crystal orientations;
• and
• (b) forming a second TiN layer upon said first TiN layer using a reaction between NH3 and TiCl4 at a second NH3:TiCl4 ratio different from said first NH3:TiCl4 ratio;
• wherein said steps (a) and (b) are performed at a temperature of less than about 550° C.

A method of depositing a composite titanium nitride (TiN) layer upon a substrate comprising the steps of:

• (a) forming a first TiN layer using a reaction between NH3 and TiCl4 at a first NH3:TiCl4 ratio, wherein the first TiN layer has primarily <220> and <200> crystal orientations;
• (b) forming a second TiN layer upon said first TiN layer using a reaction between NH3 and TiCl4 at a second NH3:TiCl4 ratio different from said first NH3:TiCl4 ratio;
• and
• (c) repeating said step (a) and said step (b) in an alternate manner to produce said composite TiN layer.