Electrical and thermal contact for use in semiconductor devices
AssigneeMicron Technology, Inc.
InventorAlan R. Reinberg
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AssigneeMicron Technology, Inc.
InventorAlan R. Reinberg
Estimating the term…
The electrical and thermal contact fabricated by forming a first layer on a surface of a semiconductor device, depositing a dielectric layer adjacent the first layer, patterning the dielectric layer to define an insulator component, and forming a second layer adjacent the insulator component and in partial contact with the first layer. The first layer contacts an adjacent structure of the semiconductor device. The first and second layers may be patterned separately or simultaneously to respectively define an intermediate conductive layer, which communicates with ths contacted structure, and a contact layer. Due to its structure, which requires relatively little electrical current to generate a desired amount of heat, the electrical and thermal contact effectively contains heat within and prevents heat from dissipating from a contacted structure, and is particularly useful for contacting and inducing a change in the electrical conductivity of structures which include phase change materials.
A process for fabricating a contact on a semiconductor device, comprising:
A method for thermally insulating a phase change component of a semiconductor device structure, comprising:
A method for fabricating a contact for a semiconductor device structure that includes a phase change component, comprising:
Dependencies are inferred from the claim text.