US 6,548,390 B1 · SEMICONDUCTOR PROCESSING METHODS OF FORMING CONTACT OPENINGS, METHODS OF FORMING MEMORY CIRCUITRY, METHODS OF FORMING ELECTRICAL CONNECTIONS, AND METHODS OF FORMING DYNAMIC RANDOM ACCESS MEMORY (DRAM) CIRCUITRY

Abstract

Methods of forming contact openings, memory circuitry, and dynamic random access memory (DRAM) circuitry are described. In one implementation, an array of word lines and bit lines are formed over a substrate surface and separated by an intervening insulative layer. Conductive portions of the bit lines are outwardly exposed and a layer of material is formed over the substrate and the exposed conductive portions of the bit lines. Selected portions of the layer of material are removed along with portions of the intervening layer sufficient to (a) expose selected areas of the substrate surface and to (b) re-expose conductive portions of the bit lines. Conductive material is subsequently formed to electrically connect exposed substrate areas with associated conductive portions of individual bit lines.

Claims14

Dependent claims

In a matrix of conductive lines formed over a substrate comprising first and second series of conductive lines, one series being formed over another, an electrical connection method of establishing electrical communication between at least some of the lines and substrate node locations comprising:

removing material of individual lines of an uppermost of the series of lines and exposing conductive material of the individual lines;
after the removing of the material of the individual lines, forming insulative material over the substrate and the exposed conductive material;
masking over the substrate and defining mask openings over substrate node locations with which electrical communication is desired;
removing insulative material through the mask openings and other substrate material sufficient to expose both the conductive material of the individual lines which was previously exposed and the substrate node locations with which electrical communication is desired;
and
forming a plurality of conductive interconnects over the substrate, the interconnects establishing electrical communication between second exposed conductive material of the individual lines and individual respective substrate node locations.

3 more elements

In a matrix of conductive lines formed over a semiconductive substrate comprising first and second series of conductive lines, an electrical connection method of establishing electrical communication between at least some of the lines and substrate node locations comprising:

removing material of individual lines of one series of lines and exposing conductive material of the individual lines;
after the removing of the material of the individual lines, forming insulative material over the substrate and the exposed conductive material;
removing insulative material and other substrate material sufficient to expose both the conductive material of the individual lines which was previously exposed and the substrate node locations with which electrical communication is desired;
and
forming a plurality of conductive interconnects over the substrate, the interconnects establishing electrical communication between second exposed conductive material of the individual lines and individual respective substrate node locations.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor processing methods of forming contact openings, methods of forming memory circuitry, methods of forming electrical connections, and methods of forming dynamic random access memory (dram) circuitry

Life of this patent

Semiconductor processing methods of forming contact openings, methods of forming memory circuitry, methods of forming electrical connections, and methods of forming dynamic random access memory (dram) circuitry

Life of this patent

Abstract

Claims14