Semiconductor device and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMasaru Moriwaki, Takayuki Yamada, Kazuhiko Yamamoto
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Abstract
After an insulating film serving as a gate insulating film is formed on a semiconductor substrate, a titanium nitride film is deposited by chemical vapor deposition on the insulating film. Then, a tungsten film is deposited by sputtering on the titanium nitride film. Subsequently, a multilayer film composed of the tungsten film and the titanium nitride film is patterned to form a gate electrode composed of the multilayer film.
Claims14
A method for fabricating a semiconductor device, the method comprising the steps of:
- forming a first insulating film serving as a gate insulating film on a semiconductor substrate;
- depositing a titanium nitride film by chemical vapor deposition on the first insulating film;
- forming a second insulating film on the titanium nitride film and patterning the second insulating film to form a capacitor insulating film;
- depositing a tungsten film by sputtering on the titanium nitride film;
- and
- patterning a multilayer film comprising the tungsten film and the titanium nitride film to form a gate electrode composed of the multilayer film,
- wherein the step of patterning the multilayer film to form the gate electrode includes the step of:
- forming an upper electrode of a capacitor composed of the tungsten film and a lower electrode of the capacitor composed of the titanium nitride film.
A method for fabricating a semiconductor device, the method comprising the steps of:
- forming a first insulating film serving as a gate insulating film on a semiconductor substrate;
- depositing a titanium nitride film by chemical vapor deposition on the first insulating film;
- forming a second insulating film on the titanium nitride film and patterning the second insulating film to form a hard mask composed of the second insulating film above the isolation region;
- depositing a tungsten film by sputtering on the titanium nitride film;
- and
- patterning a multilayer film comprising the tungsten film and the titanium nitride film to form a gate electrode composed of the multilaver film,
- wherein the step of patterning the multilayer film to form the gate electrode includes the step of:
- patterning the titanium nitride film by using the hard mask to form a resistor composed of the titanium nitride film.
A method for fabricating a semiconductor device, the method comprising the steps of:
- forming a first insulating film serving as a gate insulating film on a semiconductor substrate;
- depositing a titanium nitride film by chemical vapor deposition on the first insulating film;
- depositing a tungsten film that does not include a halogen element by sputtering on the titanium nitride film;
- and
- patterning a multilayer film comprising the tungsten film and the titanium nitride to form a gate electrode composed of the multilayer film,
- wherein the step of depositing the titanium nitride film includes a step of performing a heat treatment with respect to the titanium nitride film in an ammonia atmosphere, while residual impurities contained in the titanium nitride film are reduced by the heat treatment.
A method for fabricating a semiconductor device, the method comprising the steps of:
- forming a first insulating. film serving as a gate insulating film on a semiconductor substrate;
- depositing a titanium nitride film by chemical vapor deposition on the first insulating film;
- depositing a tungsten film that does not include a halogen element by sputtering on the titanium nitride film;
- and
- patterning a multilayer film comprising the tungsten film and the titanium nitride film to form a gate electrode composed of the multilayer film,
- wherein the step of depositing the titanium nitride film includes a step of performing a heat treatment with respect to the titanium nitride film at a temperature not less than a temperature at which the titanium nitride film is deposited, while residual impurities contained in the titanium nitride film are reduced by the heat treatment.
A method for fabricating a semiconductor device, the method comprising the steps of:
- forming a first insulating film serving as a gate insulating film on a semiconductor substrate;
- depositing a titanium nitride film by chemical vapor deposition on the first insulating film;
- depositing a tungsten film that does not include a halogen element by sputtering on the titanium nitride film;
- and
- patterning a multilayer film comprising the tungsten film and the titanium nitride film to form a gate electrode composed of the multilayer film,
- wherein the step of depositing the titanium nitride film is performed at a temperature not less than 600° C. to reduce residual impurities contained in the titanium nitride film.
Dependencies are inferred from the claim text.