Method for reducing hole defects in the polysilicon layer
AssigneeUnited Microelectronics Corp.
InventorsChung-Jung Hsu, Chih-Hsien Huang
Life of this patent
Estimating the term…
Abstract
A method for reducing hole defects in the polysilicon layer. The method at least includes the following steps. First of all, a semiconductor substrate is provided, a polysilicon layer is formed over the semiconductor substrate. Then, no hole defects bottom anti-reflective coating process is performed, wherein the no hole defect bottom anti-reflective coating process is selected from the group consisting of dehydration baking, hydrophobic solvent treatment, and steady baking. Finally, a bottom anti-reflective coating is formed over the polysilicon layer.
Claims22
A method for reducing hole defects in the polysilicon layer, said method comprising the steps of:
- providing a semiconductor substrate;
- forming a polysilicon layer over said semiconductor substrate;
- dehydration baking said polysilicon layer;
- and
- forming a bottom anti-reflective coating over said polysilicon layer.
A method for reducing hole defects in the polysilicon layer, said method comprising the steps of:
- providing a semiconductor substrate;
- forming a polysilicon layer over said semiconductor substrate;
- treating said polysilicon layer with a hydrophobic solvent;
- and
- forming a bottom anti-reflective coating over said polysilicon layer.
A method for reducing hole defects in the polysilicon layer, said method comprising the steps of:
- providing a semiconductor substrate;
- forming a polysilicon layer over said semiconductor substrate;
- steady baking said polysilicon layer to rise temperature step by step;
- and
- forming a bottom anti-reflective coating over said polysilicon layer.
A method for reducing hole defects in the polysilicon layer, said method comprising the steps of:
- providing a semiconductor substrate;
- forming a polysilicon layer over said semiconductor substrate;
- performing a dehydrating treatment, wherein said dehydrating treatment is selected from the group consisting of dehydration baking, a mixture of PGME [CH3OCH2CH(OH)CH3] and PGMEA [CH3CH(OCOCH3)CH3OCH3] treatment, and steady baking;
- and
- forming a bottom anti-reflective coating over said polysilicon layer.
Dependencies are inferred from the claim text.