Method for forming and patterning film

A method for manufacturing a semiconductor device comprising:

• preparing a substrate having an insulation portion and a conductive portion both of which are exposed on a surface of the substrate;
• forming a metallic film on the substrate, the metallic film including a first portion contacting the insulation portion and a second portion contacting the conductive portion;
• forming, a stress adjustment film on the metallic film to control a stress at an interface between the first portion of the metallic film and the insulation portion;
• removing the first portion of the metallic film from the insulation portion while leaving the second portion of the metallic film on the conductive portion.

A method of patterning a film, comprising:

• preparing a member having a surface, the surface including a first surface portion made of a first material and a second surface portion made of a second material different from the first material;
• forming a film on the first surface portion and the second surface portion of the member, and providing a stress adjustment film to have a total stress which controls a difference between a first adhesion of the film with respect to the first surface portion and a second adhesion of the film with respect to the second surface portion;
• and
• removing a first film portion of the film from the first surface portion while leaving a second film portion of the film on the second surface portion.

A method for patterning a metallic film, comprising:

• preparing a silicon wafer having a surface, the surface including a first surface portion made of an insulation material and a second surface portion made of one of metal and silicon;
• forming a metallic film, which comprises a stress adjustment layer, on the surface of the silicon wafer the metallic film having a total stress which is increased on the first surface portion and the second surface portion for decreasing an adhesion between the metallic film and the first surface portion;
• adhering an adhesive sheet to the silicon wafer with the metallic film interposed there between;
• and
• stripping the adhesive sheet from the silicon wafer to remove the metallic film from the first surface portion and to leave the metallic film on the second surface portion.