Method for reducing pitch between conductive features, and structure formed using the method

Abstract

A method is described which may be used to reduce a pitch between conductive features. One embodiment of the method involves forming a structure including a substrate, a conductive layer on the substrate, multiple photoresist features arranged on the conductive layer, a polymer layer on top surfaces and sidewalls of each of the photoresist features, and a material layer on and around the photoresist features and the polymer layers. An upper portion of the material layer is removed such that upper surfaces of the photoresist features and the polymer layer are exposed, and a remaining portion of the material layer remains. The polymer layer is removed, and the photoresist features and the remaining portion of the material layer are used as etch masks to pattern the conductive layer, thereby producing a number of conductive features. The photoresist features and the remaining portion of the material layer are removed.

Dependencies are inferred from the claim text.