Gettering technique for wafers made using a controlled cleaving process
AssigneeSilicon Genesis Corporation
InventorsFrancois J. Henley, Nathan W. Cheung
Life of this patent
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Abstract
A technique for forming a gettering layer in a wafer made using a controlled cleaving process. The gettering layer can be made by implanting using beam line or plasma immersion ion implantation, or made by forming a film of material such as polysilicon by way of chemical vapor deposition. A controlled cleaving process is used to form the wafer, which is a multilayered silicon on insulator substrate. The gettering layer removes and/or attracts impurities in the wafer, which can be detrimental to the functionality and reliability of an integrated circuit device made on the wafer.
Claims20
A method for producing a semiconductor wafer comprising:
- providing a donor substrate;
- implanting first particles into the substrate to a first depth to produce a stressed layer, thereby dividing the donor substrate into a semiconductor layer and a remaining portion of the donor substrate;
- and
- disposing a gettering layer within a region of at least one of the semiconductor layer, the stressed layer, and the remaining portion of the donor substrate, the gettering layer being patterned;
- wherein the gettering layer provides trapping sites for mobile impurity species.
A method of producing a semiconductor wafer comprising:
- providing a donor substrate;
- implanting first particles into the substrate to a first depth to produce a stressed layer, thereby dividing the donor substrate into a semiconductor layer and a remaining portion of the donor substrate;
- disposing a gettering layer within a region of at least one of the semiconductor layer, the stressed layer, and the remaining portion of the donor substrate, the gettering layer being patterned;
- and
- applying energy to a region of the donor substrate to produce a controlled cleaving action within the stressed layer to separate the semiconductor layer from the remaining portion of the donor substrate;
- wherein the gettering layer provides trapping sites for mobile impurity species.
A method for producing a semiconductor wafer comprising:
- providing a donor substrate having <100> crystal orientation;
- implanting hydrogen ions into the substrate to a first depth to produce a stressed layer, thereby dividing the donor substrate into a semiconductor layer and a remaining portion of the donor substrate;
- and
- providing a gettering layer within a region of at least one of the semiconductor layer, the stressed layer, and the remaining portion of the donor substrate, the gettering layer being a patterned, deposited polysilicon layer;
- wherein the gettering layer provides trapping sites for mobile impurity species.
Dependencies are inferred from the claim text.