Ion beam irradiation apparatus and method of igniting a plasma for the same
AssigneeNissin Electric Co., Ltd.
InventorNariaki Hamamoto
Life of this patent
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Abstract
When a plasma is ignited in a plasma generator, an ion beam is made to run in the plasma generator, and in this state, a positive voltage with respective to ground is applied to a plasma production chamber from a DC power source. Secondary electrons are generated when the ion beam collides with a plasma generating gas which flows out of the plasma production chamber into a path of the ion beam. The secondary electrons are led into the plasma production chamber by the positive voltage, and within the plasma production chamber, a plasma ignition is triggered using the secondary electrons led into the plasma production chamber and a radio frequency.
Claims6
A method of operating an ion beam irradiation apparatus comprising the steps of:
- (a) applying a positive voltage to a plasma generator by a DC power source when the ion beam travels in a vacuum chamber;
- (b) leading secondary electrons into the plasma generator from the vacuum chamber by the positive voltage, the secondary electrons being generated by a collision of the ion beam with the plasma generating gas which is flown out of the plasma generator into the vacuum chamber by the positive voltage;
- (c) igniting a plasma by the secondary electrons as a trigger of an ignition, when a radio frequency generator introduces a radio frequency;
- (d) irradiating the ion beam on a substrate;
- and
- (e) supplying the plasma to the substrate for suppressing a charge-up of the substrate while irradiating the plasma on the substrate.
A method of implanting ions into a semiconductor substrate by an ion beam irradiation for fabricating a semiconductor device, the method comprising the steps of:
- (a) applying a positive voltage to a plasma generator by a DC power source when the ion beam travels in a vacuum chamber;
- (b) leading secondary electrons into the plasma generator from the vacuum chamber by the positive voltage, the secondary electrons being generated by a collision of the ion beam with the plasma generating gas which is flown out of the plasma generator into the vacuum chamber by the positive voltage;
- and
- (c) igniting a plasma by the secondary electrons as a trigger of an ignition when a radio frequency generator introduces a radio frequency in the plasma generator irradiating the ion beam on the semiconductor substrate;
- and
- (d) supplying the plasma on the semiconductor substrate for suppressing a charge up of the semiconductor substrate while the plasma is irradiated on the semiconductor substrate.
An ion beam irradiation apparatus for irradiating an ion beam on a substrate comprising:
- a vacuum chamber for generating secondary electrons when the ion beam collides with an ion generating gas therein;
- and
- a plasma generator connected to the vacuum chamber, the plasma generator including:
- a radio frequency discharge generator for generating a frequency discharge;
- an ion generating gas introducer for introducing the ion generating gas into the plasma generator;
- and
- a DC power source connected between the plasma generator and the ground,
- wherein the DC power source applies a positive voltage to the plasma generator so that the secondary electrons are led into the plasma generator, when the secondary electrons are generated in the vacuum chamber, and the led secondary electrons, as an ignition trigger, ignite a plasma in the plasma generator when the radio frequency discharge generator introduces a radio frequency into the vacuum chamber.
Dependencies are inferred from the claim text.