Semiconductor thin film, semiconductor device employing the same, methods for manufacturing the same and device for manufacturing a semiconductor thin film

A method for manufacturing a semiconductor thin film on a substrate through plasma resolution of raw material gas comprising

• forming an interfacial film on the substrate with ion collision energy applied on the interfacial film surface during the interfacial film forming process and
• depositing and growing a main body semiconductor film on said interfacial film with ion collision energy applied on the semiconductor film surface during the main body semiconductor film growing process,
• wherein said ion collision energy applied on the interfacial film surface during the interfacial film forming process is larger than said ion collision energy applied on the semiconductor film surface during the main body semiconductor film growing process.

A method for manufacturing a semiconductor thin film on a substrate through plasma resolution of raw material gas comprising

• forming an interfacial film on the substrate with an ion flux applied on the interfacial film surface during the interfacial film forming process and
• depositing and growing a main body semiconductor film on said interfacial film with an ion flux applied on the semiconductor film surface during the main body film growing process,
• wherein said ion flux applied on the interfacial film surface during the interfacial film forming process is restricted to be larger than said ion flux applied on the semiconductor film surface during the main body film growing process.

A method for manufacturing a semiconductor thin film on a substrate through plasma resolution of raw material gas comprising

• depositing and growing a main body semiconductor film on the substrate with ion collision energy applied on the semiconductor film surface during the main body film growing process and
• smoothing the surface of the semiconductor film with an ion collision energy applied on the semiconductor film surface during the smoothing process,
• wherein said ion collision energy applied on the semiconductor film surface during the smoothing process is restricted to be larger than said ion collision energy applied on the semiconductor film surface during the main body film growing process.

A method for manufacturing a semiconductor thin film on a substrate through plasma resolution of raw material gas comprising

• depositing and growing a main body semiconductor film on the substrate with an ion flux applied on the semiconductor film surface during the main body film growing process and
• smoothing the surface of the semiconductor film with an ion flux applied on the semiconductor film surface during the smoothing process,
• wherein said ion flux applied on the semiconductor film surface during the smoothing process is restricted to be larger than said ion flux applied on the semiconductor film surface during the main body film growing process.