Multi-thickness silicon films on a single semiconductor-on-insulator (SOI) chip using simox
AssigneeAdvanced Micro Devices, Inc.
InventorRalf van Bentum
Life of this patent
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Abstract
A semiconductor-on-insulator (SOI) chip. The SOI chip having a substrate; a buried oxide (BOX) layer disposed on the substrate; and an active layer disposed on the BOX layer, the active layer divided into a first tile and a second tile, the first tile having a first thickness and the second tile having a second thickness, the second thickness being smaller than the first thickness; wherein the BOX layer is formed under the active layer in an area of the first tile by implanting oxygen ions with a first energy level and a first dosage and the BOX layer is formed under the active layer in an area of the second tile by implanting oxygen ions with a second energy level and a second dosage.
Claims18
A method of fabricating a semiconductor-on-insulator (SOI) chip, the SOI chip having a substrate, a buried oxide (BOX) layer disposed on the substrate and an active layer disposed on the BOX layer, the active layer divided into a first tile and a second tile, the method comprising the steps of:
- masking the second tile with a first mask, the first mask leaving the first tile exposed;
- implanting oxygen ions into the chip in the area of the first tile with a first energy level and a first dosage, wherein the first mask substantially blocks implantation of oxygen ions into the second tile;
- stripping the first mask;
- masking the first tile with a second mask, the second mask leaving the second tile exposed and having exposure overlap with the first mask;
- implanting oxygen ions into the chip in the area of the second tile with a second energy level and a second dosage, wherein the second mask substantially blocks implantation of oxygen ions into the first tile;
- stripping the second mask;
- and
- annealing the chip after each of the first and second masks have been stripped so as to define the BOX layer disposed continuously under the first and the second tiles and such that the first tile has a first thickness and the second tile has a second thickness, the second thickness being smaller than the first thickness.
A method of fabricating a semiconductor-on-insulator (SOI) chip, the SOI chip having a substrate, a buried oxide (BOX) layer disposed on the substrate and an active layer disposed on the BOX layer, the active layer divided into a first tile and a second tile, the method comprising the steps of:
- masking the second tile with a first mask, the first mask leaving the first tile exposed;
- implanting oxygen ions into the chip in the area of the first tile with a first energy level and a first dosage;
- stripping the first mask;
- masking the first tile with a second mask, the second mask leaving the second tile exposed;
- implanting oxygen ions into the chip in the area of the second tile with a second energy level and a second dosage, wherein the first energy level and the second energy level are generally the same, and the first dosage being less than the second dosage;
- stripping the second mask;
- and
- annealing the chip after each of the first and second masks have been stripped so as to define the BOX layer disposed continuously under the first and the second tiles and such that the first tile has a first thickness and the second tile has a second thickness, the second thickness being smaller than the first thickness.
A method of fabricating a semiconductor-on-insulator (SOI) chip, the SOI chip having a substrate, a buried oxide (BOX) layer disposed on the substrate and an active layer disposed on the BOX layer, the active layer divided into a first tile and a second tile, the method comprising the steps of:
- masking the second tile with a first mask, the first mask leaving the first tile exposed;
- implanting oxygen ions into the chip in the area of the first tile with a first energy level and a first dosage;
- stripping the first mask;
- masking the first tile with a second mask, the second mask leaving the second tile exposed;
- implanting oxygen ions into the chip in the area of the second tile with a second energy level and a second dosage, wherein the first dosage and the second dosage are generally the same, and the first energy level is greater than the second energy level;
- stripping the second mask;
- and
- annealing the chip after each of the first and second masks have been stripped so as to define the BOX layer disposed continuously under the first and the second tiles and such that the first tile has a first thickness and the second tile has a second thickness, the second thickness being smaller than the first thickness.
Dependencies are inferred from the claim text.