Method of forming a MIS capacitor
AssigneeApplied Materials, Inc.
InventorsPravin Narwankar, Ravi Rajagopalan
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Abstract
Provided is a method of integrating Ta2O5 into an MIS stack capacitor for a semiconductor device by forming a thin SiON layer at the Si/TaO interface using low temperature remote plasma oxidation anneal. Also provided is a method of forming an MIS stack capacitor with improved electrical performance by treating SiO2 with remote plasma nitridation or SiN layer with rapid thermal oxidation or RPO to form a SiON layer prior to Ta2O5 deposition with TAT-DMAE, TAETO or any other Ta-containing precursor.
Claims13
A method of forming a dielectric for an MIS capacitor, comprising the step of:
- forming a silicon oxynitride layer at the interface of a silicon surface of a substrate and a dielectric film, thereby forming an MIS capacitor, said silicon oxynitride layer is formed by the steps of forming a silicon nitride film on a silicon surface of said substrate, and treating said silicon nitride film with rapid thermal oxidation to form a silicon oxynitride film prior to formation of the dielectric film.
A method of integrating tantalum pentaoxide into an MIS stack capacitor for a semiconductor device, comprising the steps of:
- forming a thin silicon oxynitride barrier layer at the silicon/tantalum pentaoxide interface in said MIS stack capacitor, said silicon oxynitride layer formed by the steps of forming a silicon nitride film on a silicon surface of a substrate, and treating said silicon nitride film with rapid thermal oxidation to form a silicon oxynitride film;
- and
- depositing tantalum pentaoxide above said barrier layer with a Ta-containing precursor, thereby integrating tantalum pentaoxide into a MIS stack capacitor.
A method of forming an MIS stack capacitor, comprising the steps of:
- forming a silicon nitride film on a silicon surface of a substrate;
- treating said silicon nitride film with rapid thermal oxidation to form a silicon oxynitride film, wherein said silicon nitride film is eliminated;
- and
- depositing tantalum pentaoxide above said silicon oxynitride film with a Ta-containing precursor, thereby forming an MIS stack capacitor.
Dependencies are inferred from the claim text.