SOI MOSFET and method of fabrication
AssigneeAdvanced Micro Devices, Inc.
InventorsWilliam G. En, Dong-Hyuk Ju, Srinath Krishnan
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Abstract
A MOSFET formed in semiconductor-on-insulator format. The MOSFET includes a source and a drain formed in a layer of semiconductor material, each having an extension region and a deep doped region. A body is formed between the source and the drain and includes a first damaged region adjacent the extension of the source and a second damaged region adjacent the extension of the drain. The first and second damaged regions include defects caused by amorphization of the layer of semiconductor material. A gate electrode, the source, the drain and the body are operatively arranged to form a transistor.
Claims14
a MOSFET formed in semiconductor-on-insulator format, comprising:
- a layer of semiconductor material disposed on an insulating layer, the insulating layer disposed on a substrate;
- a source and a drain formed in the layer of semiconductor material, each of the source and the drain including an extention region a deep doped region;
- a body formed in the layer of semiconductor material and between the source and the drain, the body including a first damaged region disposed adjacent and laterally inward from the extention of the source and a second damaged region disposed adjacent and laterally inward from the extention of the drain, the first and second damaged region including defects caused by amorphization of the layer of semiconductor material;
- and
- a gate electrode disposed over the body region and separated from the layer of semiconductor material by a gate dielectric, the gate electrode, the source, the drain and the body operatively arranged to from a transistor.
A MOSFET formed in semiconductor-on-insulator format, comprising:
- a layer of semiconductor material disposed on an insulating layer, the insulating layer disposed on a substrate;
- a source and a drain formed in the layer of semiconductor material, each of the source and the drain including an extension region and a deep doped region;
- a body formed in the layer of semiconductor material and between the source and the drain, the body including a first damaged region adjacent the extension of the source and a second damaged region adjacent the extension of the drain, wherein the damaged regions respectively conform to a source side extension/body junction and a drain side extension/body junction;
- and
- a gate electrode disposed over the body region and separated from the layer of semiconductor material by a gate dielectric, the gate electrode, the source, the drain and the body operatively arranged to form a transistor.
Dependencies are inferred from the claim text.