Method for fabricating a cylinder-type capacitor for a semiconductor device

Abstract

A method for fabricating a cylinder-type capacitor for a semiconductor device includes the steps of forming in sequence a first insulating layer, a first etch stop layer, a second insulating layer, and a second etch stop layer on a semiconductor substrate including a conductive region, forming a second etch stop layer pattern, a second insulating layer pattern, and a first etch stop layer pattern by etching a part of the second etch stop layer, the second insulating layer, and the first etch stop layer so that a storage node hole for exposing the surface of a part of the first insulating layer may be formed, forming a spacer on an inner wall of the storage node hole, forming a first insulating layer pattern by etching the first insulating layer exposed using the second etch stop layer pattern and the spacer as a mask so that a node contact hole for exposing the conductive region is formed, removing the second etch stop layer pattern and the spacer, forming a lower electrode on the surfaces of the storage node hole and the node contact hole, and forming a dielectric layer and an upper electrode on the lower electrode. According to the present invention, a semiconductor cylinder-type capacitor is provided at a relatively low production cost using simplified fabrication processes.

Dependencies are inferred from the claim text.