Loading patent…
AssigneeHitachi, Ltd.
InventorsTakaaki Suzuki, Toshihide Nabatame, Kazutoshi Higashiyama
Estimating the term…
The temperature at which an oxide dielectric thin film is formed can be made lower than conventional by reducing the concentration of oxygen in an atmosphere for forming the thin film. As a result, there can be formed an oxide dielectric thin film which has a crystal structure preferentially oriented at a crystal plane allowing a polarization axis to be directed in the vertical direction, which eliminates any reaction with an electrode material, and controls the growth of crystal grains. The use of such an oxide dielectric thin film can provide an oxide dielectric element having a high spontaneous polarization and a small coercive field. Consequently, it is possible to achieve a dielectric element having a high density of integration for detecting reading and writing operations, and a semiconductor device using the same.
A method of producing an oxide dielectric element including a top electrode, an oxide dielectric thin film, and a bottom electrode, comprising the steps of:
A method of producing an oxide dielectric element including a top electrode, an oxide dielectric thin film, and a bottom electrode, comprising the steps of:
A method of producing an oxide dielectric element including a top electrode, an oxide dielectric thin film, and a bottom electrode, wherein:
A method of producing an oxide dielectric thin film including a top electrode, an oxide dielectric thin film, and a bottom electrode, characterized in that said oxide dielectric thin film is expressed by a chemical structural formula:
A method of producing an oxide dielectric element including a top electrode, an oxide dielectric thin film, and a bottom electrode, comprising the step of:
A method of producing an oxide dielectric element including a top electrode, an oxide dielectric thin film, and a bottom electrode, comprising the step of:
Dependencies are inferred from the claim text.