US 6,548,332 B2 · Thermal treatment process for forming thin film transistors without the use of plasma treatment to further improve the output property of the thin film transistor

Abstract

A process for forming a thin film transistor includes steps of (a) forming a gate on a portion of a substrate, (b) forming a gate dielectric layer, a semiconductor layer, a source, a drain, and a passivation in order on the substrate, and (c) proceeding a thermal treatment under atmosphere of a specific assistant gas. The specific assistant gas is one selected from a group consisting of hydrogen, steam, inert gases, and gas mixtures thereof. After providing the specific assistant gas during the thermal treatment, the process can improve the output property of the thin film transistor for avoiding double hump phenomenon.

Claims24

Dependent claims

A process for forming a thin film transistor, comprising steps of:

(a) forming a gate on a portion of a substrate;
(b) forming a gate dielectric layer on said gate and said substrate;
(c) forming a semiconductor layer on said gate dielectric layer;
(d) defining a source and a drain on said semiconductor layer;
(e) forming a passivation on said source, said drain, and said semiconductor layer;
and
(f) proceeding a thermal treatment under atmosphere of a specific assistant gas.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

09/838,917Filed 20 Apr 2001

Priority

TW 89114766 A24 Jul 2000

Published

US 2002/0048867 A125 Apr 2002

Granted

15 Apr 2003

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10D 30/6732
Characterised by the shapes, relative sizes or dispositions of the gate electrodes: bottom-gate only TFTs
H10D 30/0316
Characterised by the gate electrodes: of lateral bottom-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
H10D 30/6746
Silicon: amorphous silicon

Thermal treatment process for forming thin film transistors without the use of plasma treatment to further improve the output property of the thin film transistor

Life of this patent

Thermal treatment process for forming thin film transistors without the use of plasma treatment to further improve the output property of the thin film transistor

Life of this patent

Abstract

Claims24