Distributed Bragg reflector laser and fabrication method
AssigneeLucent Technologies Inc.
InventorKishmore K. Kamath
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Abstract
A distributed Bragg reflector laser is fabricated wherein material defects are produced in the laser's tuning waveguide region. The defects may be created by introducing impurities into the region. The defects increase the non-radiative recombination rate of injected carriers, thereby decreasing FM efficiency and improving RF performance. Injected carrier electrons are substantially separated from injected carrier holes to reduce bimolecular and Auger recombination rates, thus improving tuning range.
Claims17
A method of fabrication of a distributed Bragg reflector laser comprising a tuning waveguide region, wherein the method comprises:
- causing injected carrier electrons to be substantially spatially separated from injected carrier holes in the waveguide region thereby reducing bimolecular and Auger recombination rates;
- and
- producing material defects in the waveguide region, thereby increasing non-radiative recombination rates of injected carriers.
A method of fabricating an integrated circuit, the circuit comprising a distributed Bragg reflector laser having a waveguide region, wherein the method comprises:
- causing injected carrier electrons to be substantially spatially separated from injected carrier holes in the waveguide region thereby reducing bimolecular and Auger recombination rates;
- and
- producing material defects in the waveguide region, thereby increasing non-radiative recombination rates of injected carriers.
Dependencies are inferred from the claim text.