Method for manufacturing semiconductor laser diode
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorJoon-Seop Kwak
Life of this patent
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Abstract
A method for manufacturing a semiconductor laser diode is described. The method for manufacturing a semiconductor laser diode includes sequentially forming a buffer layer, a first clad layer, a first waveguide layer, an active layer, a second waveguide layer, a second clad layer, and a cap layer on a substrate, patterning the cap layer, and patterning the second clad layer as a ridge structure by making the patterned cap layer as an upper layer, selectively forming a passivation layer for covering the second clad layer patterned as the ridge structure around the cap layer, and forming an electrode in contact with the cap layer on the passivation layer.
Claims8
A method for manufacturing a semiconductor laser diode comprising:
- sequentially forming a buffer layer, a first clad layer, a first waveguide layer, an active layer, a second waveguide layer, a second clad layer, and a cap layer on a substrate;
- forming an etching mask on the cap layer;
- sequentially patterning the cap layer and the second clad layer using the etching mask, and forming a ridge structure by etching the second clad layer in a range of not exposing the active layer;
- selectively forming a passivation layer by forming a metal layer selected from a group consisting of Ti and Zr, and oxidizing said metal layer, for covering the side walls of the cap layer and the second clad layer patterned as the ridge structure using the etching mask;
- and
- forming an electrode in contact with the cap layer on the passivation layer after the etching mask is removed.
A method for manufacturing a semiconductor laser diode comprising:
- sequentially forming a buffer layer, a first clad layer, a first waveguide layer, an active layer, a second waveguide layer, a second clad layer, and a cap layer on a substrate;
- forming an etching mask on the cap layer;
- sequentially patterning the cap layer and the second clad layer using the etching mask, and forming a ridge structure by etching the second clad layer in a range of not exposing the active layer;
- forming a metal layer on the entire surface of the exposed surface including the ridge structure, in which the cap layer and the second clad layer are sequentially patterned;
- removing the etching mask;
- oxidizing the metal layer after removing the etching mask;
- and
- forming an electrode in contact with the cap layer on the oxide metal layer wherein the metal layer is formed of a Ti layer, a Zr layer, or an Si layer.
Dependencies are inferred from the claim text.