Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same

A silicon single crystal wafer for epitaxial growth grown by the Czochralski method, which is doped with nitrogen, has an OSF region in its plane, and shows an LEP density of 20/cm2 or less in the OSF region.

A silicon single crystal wafer for epitaxial growth grown by the Czochralski method, which is doped with nitrogen, has an OSF region in its plane, and shows an OSF density of 1×104/cm2 or less in the OSF region.

An epitaxial wafer, which has 1×108/cm3 or more of BMDs in a silicon single crystal wafer which is doped with nitrogen and on which an epitaxial layer is formed and a defect density of 0.11/cm2 (20/wafer having a diameter of 6 inches) or less on an epitaxial layer surface.

A method for producing a silicon single crystal wafer for epitaxial growth, wherein, when a silicon single crystal doped with nitrogen is grown by the Czochralski method, the crystal is pulled under such a condition that the crystal should have a V-rich region for entire plane of the crystal.

A method for producing a silicon single crystal wafer for epitaxial growth, wherein, when a silicon single crystal doped with nitrogen is grown by the Czochralski method, the crystal is pulled so that a center portion of the crystal should become a V-rich region and a peripheral portion of the crystal should become an OSF region, and then the OSF region is eliminated.

A method for producing a silicon single crystal wafer for epitaxial growth, wherein, when the silicon single crystal doped with nitrogen is grown by the Czochralski method, the crystal is pulled so that a center portion of the crystal should become a V-rich region and the crystal should have an OSF region, and a cooling rate of 0.8° C./min or less is used within the temperature region of 1000° C. to 900° C.

A method for evaluating a silicon single crystal wafer for an epitaxial wafer, wherein wafers are sliced from both ends of a silicon single crystal ingot produced by the Czochralski method with nitrogen doping, and both of the wafers are subjected to preferential etching and then density of LEPs generated on the wafer surfaces is measured, or both of the wafers are subjected to a thermal oxidation treatment and then preferential etching and density of OSFs generated on the wafer surfaces is measured, so as to evaluate presence or absence of a generation of crystal defects on a surface of epitaxial layer to be grown on a silicon single crystal wafer produced from a remaining portion of the silicon single crystal ingot from which the both wafers were sliced.