Method for bending SI materials and core wire member of SI materials

Abstract

Si material, which has been considered to be very brittle, and hard to bend, is heated to at least its brittle-ductile transition temperature. A bending moment is applied to a heated portion of the Si material so that a slip deformation is generated. Whereby it is possible to perform bending, and to greatly improve a degree of freedom for machining the Si material. The Si material has a brittle-ductile transition temperature which transfers from a brittle to a ductile state at its brittle-ductile transition temperature. At the transition temperature or more, the Si material is in a state that a slip can to be generated between its crystals in response to a bending torque applied thereto. Thus, when a bending moment is applied to the heated portion of the Si material which is heated to the transition temperature or more, a slip is generated between lattices or between crystal grains in the heated portion, so that the Si material is deformed.

Dependencies are inferred from the claim text.