LSI device polishing composition and method for producing LSI device
AssigneeShowa Denko K.K.
InventorsYoshitomo Shimazu, Takanori Kido, Nobuo Uotani
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Abstract
The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.
Claims9
An LSI device polishing composition for use in the preparation of a metal wiring layer, comprising water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, wherein the abrasive grains are surface-treated with a coupling agent.
An LSI device polishing composition for use in the preparation of a metal wiring layer, comprising water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-9.0 adjusted by an alkaline substance, wherein the abrasive grains are surface-treated with a coupling agent.
Dependencies are inferred from the claim text.