Method for forming a micro column grid array (CGA)
AssigneeBAE Systems Information and Electronic Systems Integration Inc.
InventorsTushar T. Shah, Andrew TS Pomerene, Keith K. Sturcken, Steven J. Wright
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Abstract
A method of forming a plurality of micro column interconnection structures on a semiconductor includes providing a semiconductor layer. A photoresist layer is formed on the semiconductor layer. A plurality of cavities are etched in the photoresist layer. The plurality of cavities extend through the photoresist layer to the semiconductor layer. Solder is deposited in the plurality of cavities, thereby forming a plurality of micro columns of solder.
Claims27
A method of forming a plurality of micro column interconnection structures on a semiconductor, the method comprising:
- providing a semiconductor layer;
- forming a photoresist layer on the semiconductor layer;
- etching a plurality of cavities in the photoresist layer, the plurality of cavities extending through the photoresist layer to the semiconductor layer;
- depositing solder in the plurality of cavities, thereby forming a plurality of micro columns of solder, each micro column of solder having a column thickness of between about 100 and 150 micrometers;
- and wherein the micro columns of solder have a height between about 100 and 500 micrometers;
- and
- removing the photoresist layer.
A method of preparing a chip scale package, comprising:
- providing a microelectronic device having a connection surface;
- forming a first photoresist layer on the connection surface of the microelectronic device;
- forming a plurality of cavities in the first photoresist layer, the plurality of cavities extending though the first photoresist layer to the connection surface;
- and
- depositing solder in the plurality of cavities, thereby forming a plurality of solder columns on the connection surface, each solder column having a column thickness of between about 100 and 150 micrometers and, wherein the micro columns of solder have a height between about 100 and 500 micrometers.
A method of forming a plurality of micro column interconnection structures on a semiconductor wafer, the method comprising:
- providing a semiconductor wafer;
- forming a first photoresist layer on the semiconductor wafer;
- etching a first plurality of cavities in the first photoresist layer, the first plurality of cavities extending through the first photoresist layer to the semiconductor wafer;
- depositing solder in the first plurality of cavities using vapor deposition, thereby forming a plurality of micro columns of solder;
- forming a second photoresist layer on the first photoresist layer;
- etching a second plurality of cavities in the second photoresist layer, the second plurality of cavities extending through the second photoresist layer to the first photoresist layer;
- and
- depositing solder in the second plurality of cavities, thereby extending the height of the micro columns of solder.
Dependencies are inferred from the claim text.