Post clean treatment

A method for removal of chemical residues from a metal or dielectric surface, which comprises:

• providing a semiconductor surface, wherein said surface comprises at least one metal or metal oxide and has thereon a liquid residual CMP or etching residue remover formulation comprising amines, hydroxylamines, or mixture thereof;
• contacting the metal or dielectric surface with a post-etch cleaning composition comprising:
• between 1% to 25% by weight of one or more organic acids selected from the group consisting of monofunctional, difunctional or trifunctional organic acid;
• between 0.5% and 30% by weight of an oxidizing agent;
• and
• water, wherein the post clean composition has a pH between about 3.5 and about 7,
• for a time sufficient to remove the residual processing formulation, wherein the post clean composition neutralizes and removes amines and/or hydroxylamines in the residual processing formulation, wherein said contacting removes metal or metal oxide of the semiconductor surface at a rate less than about 17 Angstroms/min.