Semiconductor light emitting device
AssigneeFurukawa Electric Co., Ltd.
InventorsToshikazu Mukaihara, Takeharu Yamaguchi, Akihiko Kasukawa
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Abstract
A semiconductor light emitting device including a semiconductor substrate and an active layer having band gap energy smaller than that of the active layer, and the bottom surface of the semiconductor substrate opposite to the active layer is a photo diffused reflection surface having unevenness. The unevenness reduces an amount of reflection rays to enable the stable operation.
Claims7
A semiconductor laser device for the emission of light having a discrete wavelength and for the obtainment of a multiple longitudinal mode lasing spectrum and a stable optical output with respect to injected current, said semiconductor laser device comprising a semiconductor substrate having a bandgap energy of Eg1, and at least one active layer having a bandgap energy of Eg2 small than Eg1 and overlying main surface of the semiconductor substrate, a bottom surface of the semiconductor substrate opposite to the main surface having unevenness for diffused reflection.
Dependencies are inferred from the claim text.