Pocked surface neutron detector
AssigneeThe United States of America as represented by the United States Department of Energy
InventorsDouglas McGregor, Raymond Klann
Life of this patent
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Abstract
The detection efficiency, or sensitivity, of a neutron detector material such as of Si, SiC, amorphous Si, GaAs, or diamond is substantially increased by forming one or more cavities, or holes, in its surface. A neutron reactive material such as of elemental, or any compound of, 10B, 6Li, 6LiF, U, or Gd is deposited on the surface of the detector material so as to be disposed within the cavities therein. The portions of the neutron reactive material extending into the detector material substantially increase the probability of an energetic neutron reaction product in the form of a charged particle being directed into and detected by the neutron detector material.
Claims15
Apparatus for detecting energetic neutrons comprising:
- a particle detecting semiconductor substrate having a first surface including at least one cavity extending into said semiconductor substrate;
- and
- a thin neutron responsive layer disposed on the first surface of said semiconductor substrate and responsive to energetic neutrons incident thereon for producing first and second charged reaction particles directed in opposite directions, wherein said neutron responsive layer is further disposed in said at least one cavity for increasing neutron detection efficiency by increasing the likelihood that the charged reaction particles will be directed into said semiconductor substrate.
Apparatus for detecting energetic neutrons comprising:
- a particle detecting semiconductor substrate having first and second surfaces, wherein said first surface includes at least one cavity extending into said semiconductor substrate;
- a first contact layer disposed on the first surface of said semiconductor substrate including the at least one cavity therein and forming a rectifying junction;
- a second low resistivity contact layer disposed on the second opposed surface of said semiconductor substrate and connected to neutral ground for self-biasing said rectifying junction with a low voltage;
- and
- a thin neutron responsive layer disposed on the first surface of said semiconductor substrate, wherein an energetic neutron interacts with said neutron responsive layer to produce first and second charged particles directed in opposite directions, and wherein said neutron responsive layer is further disposed in said at least one cavity for increasing the likelihood that the charged particles will be directed into said semiconductor substrate for increased neutron detection efficiency.
Dependencies are inferred from the claim text.