Method of improving copper interconnects of semiconductor devices for bonding
AssigneeMicron Technology, Inc.
InventorSalman Akram
Life of this patent
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Abstract
An improved wire bond with the pond pads of semiconductor devices and the lead fingers of lead frames or an improved conductor lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond wherein the bond pad on a surface of the semiconductor device comprises a layer of copper and at least one layer of metal and/or at least a barrier layer of material between the copper layer and one layer of metal on the copper layer to form a bond pad.
Claims46
A method of forming a semiconductor device assembly, said method comprising:
- providing a substrate having an upper surface and a lower surface;
- depositing a layer of copper on at least a portion of the upper surface and the lower surface of the substrate in contact therewith;
- depositing at least one layer of metal on at least a portion of the layer of copper;
- and
- patterning the layer of copper and the at least one layer of metal on one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon.
A method of forming a semiconductor device assembly, said method comprising:
- providing a substrate having an upper surface and a lower surface;
- depositing a layer of copper on at least a portion of the upper surface and the lower surface of the substrate in contact therewith;
- patterning the layer of copper on one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon;
- and
- depositing at least one layer of metal on at least a portion of the layer of copper.
A method of forming a semiconductor device assembly, said method comprising:
- providing a substrate having an upper surface and a lower surface;
- depositing a layer of copper on at least a portion of the upper surface and the lower surface of the substrate in contact therewith;
- depositing a barrier layer on at least a portion of the layer of copper;
- depositing at least one layer of metal on at least a portion of the barrier layer;
- and
- patterning the layer of copper, the barrier layer and the at least one layer of metal on one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon.
A method of forming a semiconductor device assembly, said method comprising:
- providing a substrate having an upper surface and a lower surface;
- depositing a layer of copper on at least a portion of the upper surface and the lower surface of the substrate in contact therewith;
- patterning the layer of copper on one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon;
- depositing at least one layer of metal on at least a portion of the layer of copper;
- and
- connecting one end of a conductor to the at least one layer of metal.
A method of forming a semiconductor device assembly, said method comprising:
- providing a substrate having an upper surface and a lower surface;
- depositing a layer of copper on at least a portion of the upper surface and the lower surface of the substrate in contact therewith;
- depositing a barrier layer on at least a portion of the layer of copper;
- depositing at least one layer of gold metal on at least a portion of the barrier layer;
- and
- patterning the layer of copper, the barrier layer and the at least one layer of gold metal on one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon.
A method of forming a semiconductor device assembly, said method comprising:
- providing a substrate having an upper surface and a lower surface;
- depositing a layer of copper on at least a portion of the upper surface and the lower surface of the substrate in contact therewith;
- patterning the layer of copper on one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon;
- depositing at least one layer of gold metal on at least a portion of the layer of copper;
- and
- connecting one end of a gold metal conductor to the at least one layer of gold metal.
A method of forming a semiconductor device assembly, said method comprising:
- providing a substrate having an upper surface and a lower surface;
- depositing a layer of copper on at least a portion of the upper surface and the lower surface of the substrate in contact therewith;
- patterning the layer of copper on one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon;
- depositing at least one layer of metal on at least a portion of the layer of copper;
- and
- connecting one end of a conductor to the layer of copper of the at least one bond pad.
Dependencies are inferred from the claim text.