Method of producing a piezoelectric thin film
AssigneeSeiko Epson Corporation
InventorsSatoru Miyashita, Masakazu Shinozuka, Tetsushi Takahashi
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Abstract
A method for producing the piezoelectric thin film is based on a sol-gel process and comprises the steps of: coating a substrate with a sol composition comprising a sol, of a metal component for constituting a piezoelectric film, and a polymer compound and then drying the coating to form a film; pre-sintering the film to form a porous thin film of gel comprising an amorphous metal oxide; pre-annealing the porous thin film of gel to convert the film to a film of a crystalline metal oxide; repeating the steps at least once to form laminated films of a crystalline metal oxide; and annealing the films thus prepared to grow crystal grains of perovskite type in the film into a larger size.
Claims10
A method for preparing a piezoelectric thin film by a sol-gel process, comprising the steps of:
- a) coating a substrate with a sol composition comprising a sol, of a metal component, and a polymer compound and then drying the coating to form a film;
- b) pre-sintering the film to form a porous thin film of gel comprising an amorphous metal oxide;
- f) repeating the steps a) and b) at least once to form laminated layers of porous thin films comprising the amorphous metal oxide;
- c′) pre-annealing the laminated layers of the porous thin films to convert the laminated layers to a crystalline metal oxide;
- d′) repeating the steps f) and c′) at least once to form laminated films of the crystalline metal oxide;
- and
- e′) annealing the films prepared in the step d′) to grow crystal grains of perovskite type in the laminated films into a larger size, wherein this annealing step is carried out in two stages, a first stage of which is carried out at a temperature in a range of from 600 to 800° C. with a second stage being carried out at a temperature in a range of from 800 to 1000° C.
A method for preparing a piezoelectric thin film by a sol-gel process, comprising the steps of:
- a) coating a substrate with a sol composition comprising a sol, of a metal component, and a polymer compound and then drying the coating to form a film;
- b) pre-sintering the film to for a porous thin film of gel comprising an amorphous metal oxide;
- c ) pre-annealing the porous thin film of gel to bring the porous thin film to a film formed of a crystalline metal oxide,
- d) repeating the steps a), b), and c) at least once to form laminated films of the crystalline metal oxide;
- and
- e) annealing the laminated films prepared in the step d) to grow crystal grains of perovskite type in the film of the crystalline metal oxide into a larger size, wherein this annealing step is carried out in two stages, a first stage of which is carried out at a temperature in a range from 600 to 800° C. with a second stage being carried out at a temperature in a range from 800 to 1000° C.
Dependencies are inferred from the claim text.