US 6,541,067 B1 · Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and method of using same

Abstract

A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further provided for making a vaporized ruthenium precursor for use in the chemical vapor deposition of ruthenium and ruthenium-containing materials onto substrates, wherein a ruthenium precursor formulation having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound is vaporized.

Claims43

Dependent claims

A method of fabricating a semiconductor structure, the method comprising:

providing a semiconductor substrate;
providing a ruthenium precursor formulation comprising tricarbonyl(1,2,3,4-η)-1,3-cyclohexadiene ruthenium dissolved in a solvent capable of solubilizing said ruthenium-containing precursor compound;
vaporizing said ruthenium precursor formulation to form a vaporized precursor compound;
and
directing said vaporized precursor compound toward said semiconductor substrate or to form a ruthenium film on a surface of the semiconductor substrate.

2 more elements

Dependencies are inferred from the claim text.

Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and method of using same

Life of this patent

Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and method of using same

Life of this patent

Abstract

Claims43