Back to results
US 6,539,040 B2Granted
Laser diode and fabrication process thereof
AssigneeFujitsu Quantum Devices Limited
InventorChikashi Anayama
Life of this patent
Estimating the term…
Abstract
An S3-type laser diode includes a p-type cladding layer formed on an active layer such that an inclined surface region thereof has a carrier concentration level of 1×1018 cm−3 or more, wherein the p-type cladding layer has a thickness of 0.35 μm or more.
Claims20
A laser diode, comprising:
- a substrate including an inclined surface region on a principal surface thereof;
- an active layer formed over said substrate and including an inclined surface region corresponding to said inclined surface region of said substrate;
- a first cladding layer of p-type formed on said active layer and including an inclined surface region corresponding to said inclined surface region of said active layer;
- a second cladding layer formed on said first cladding layer and including an inclined surface region of p-type corresponding to said inclined surface region of said first cladding layer, said second cladding layer further including a horizontal region of n-type adjacent to said inclined surface region of p-type, said horizontal region extending parallel to said principal surface of said substrate;
- a first electrode connected electrically to said substrate;
- and
- a second electrode connected electrically to said inclined surface region of said second cladding layer,
- said inclined surface region of said first cladding layer having a carrier concentration level of 1×1018 cm −3 or more,
- said first cladding layer having a thickness of 0.35 μm or more.
6 more elements
A laser diode, comprising:
- a substrate including an inclined surface region on a principal surface thereof;
- an active layer formed over said substrate, said active layer including an inclined surface region corresponding to said inclined surface region of said substrate;
- a first cladding layer of p-type formed on said active layer, said first cladding layer including an inclined surface region corresponding to said inclined surface region of said active layer,
- a second cladding layer formed on said first cladding layer, said second cladding layer including an inclined surface region of p-type corresponding to said inclined surface region of said first cladding layer, said second cladding layer further including a horizontal region of n-type adjacent to said inclined surface region of p-type, said horizontal region being parallel to said principal surface of said substrate;
- a first electrode connected electrically to said substrate;
- and
- a second electrode connected electrically to said inclined surface region of said second cladding layer,
- said inclined surface region of said first cladding layer having a carrier concentration level of 1×1018 cm−3 or more,
- said first cladding layer comprising an AlGaInP film containing Al with a ratio to Ga of 0.7:0.3 or more.
6 more elements
A laser diode, comprising:
- a substrate including an inclined surface region in a principal surface thereof;
- an active layer formed over said substrate, said active layer including an inclined surface region corresponding to said inclined surface region of said substrate;
- a first cladding layer of p-type formed on said active layer, said active layer including an inclined surface region corresponding to said inclined surface region of said active layer;
- a second cladding layer formed on said first cladding layer, said second cladding layer including a p-type inclined surface region corresponding to said inclined surface region of said first cladding layer, said second cladding layer including a horizontal region of n-type adjacent to said p-type inclined surface region, said horizontal region extending parallel to said principal surface of said substrate,
- a first electrode connected electrically to said substrate;
- and
- a second electrode connected electrically to said inclined surface region of said second cladding layer,
- said inclined surface region of said first cladding layer having a carrier concentration level of 1×1018 cm−3 or more,
- at least a part of said first cladding layer having a bandgap larger than a bandgap of an AlGaInP film having a composition of (Al0.7Ga0.3)0.5In0.5P.
6 more elements
A laser diode, comprising:
- a substrate having an inclined surface region on a principal surface thereof;
- an active layer formed over said substrate, said active layer including an inclined surface region corresponding to said inclined surface region of said substrate;
- a first cladding layer formed on said active layer, said first cladding layer including an inclined surface region corresponding to said inclined surface region of said active layer;
- a second cladding layer formed on said first cladding layer, said second cladding layer including an inclined surface region of p-type corresponding to said inclined surface region of said first cladding layer and a pair of n-type regions adjacent to said p-type inclined surface region at both lateral sides thereof, said n-type regions extending parallel with said principal surface of said substrate;
- a first electrode connected electrically to said substrate;
- and
- a second electrode connected electrically to said inclined surface region of aid second cladding layer,
- said inclined surface region of said first cladding layer having a carrier concentration level of 1×1018 cm−3 or more,
- said second cladding layer having a thickness of 0.35 μm or more.
6 more elements
Dependencies are inferred from the claim text.