Pulsed write techniques for magneto-resistive memories
AssigneeMicron Technology, Inc.
InventorsRichard W. Swanson, William J. Johnson, Theodore Zhu
Life of this patent
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Abstract
A magneto-resistive memory that has a shared word line and sense line is disclosed. By providing the shared word line and sense line, the number of relatively large drivers required to drive the word line and sense line currents can be reduced. This reduces the peripheral overhead of the memory, and may increase the overall density and reduce the overall power of the memory.
Claims7
A method for writing a magneto-resistive bit, the method comprising the steps of:
- supplying a word line current adjacent the magneto-resistive bit;
- and
- drawing a sense current from the word line current through at least part of the magneto-resistive bit.
A method for operating a magneto-resistive storage device, the magneto-resistive storage device having a magneto-resistive bit with a first end and a second end, a word line extending adjacent the magneto-resistive bit with the word line connected to the first end of the magneto-resistive bit, and a reading circuit coupled to the word line for providing a path for a read sense current to flow to the word line and for sensing the resistive state of the magneto-resistive bit via the read sense current, the method comprising the steps of:
- preventing the read circuit from providing a path for the read sense current to flow to the word line;
- supplying a word line current to the word line;
- and
- drawing a write sense current from the word line current through at least part of the magneto-resistive bit.
Dependencies are inferred from the claim text.