Multi-layer superconductor having buffer layer with oriented termination plane

An article, comprising:

• a substrate having a termination plane;
• a layer of a buffer material supported by the termination plane of the substrate, the layer of the buffer material having a termination plane, at most about 75% of the termination plane of the layer of the buffer material comprising the (111) plane
• wherein the termination plane of the layer of the buffer material is capable of having a layer of a superconductor material disposed thereon, and the buffer material is selected from the group consisting of CeO2, Y2O3, TbOx, GaOx, YSZ, LaAlO3, SrTiO3, Gd2O3, LaNiO3, LaCuO3, NdGaO3, NdAlO3, MgO, CaF2, AlN, NbN, TiN, VN, ZrN, NiO, Ag, Al2O3, SmBa2Cu3Ox, MgF2, LaMnO3, La0.66Ca0.33MnO3, La0.66Sr0.33MnO3, La0.66Ba0.33MnO3, La2Zr2O7, Gd2Zr2O7, Ba2Zr2O7 and doped compounds thereof.

An article, comprising:

• a substrate having a termination plane;
• a layer of a buffer material supported by the termination plane of the substrate, the layer of the buffer material having a termination plane, a ratio of an amount of the termination plane of the layer of the buffer material that comprises the (111) plane to an amount of the termination plane of the buffer material that comprises the (001) plane being less than about one
• wherein the termination plane of the layer of the buffer material is capable of having a layer of a superconductor material disposed thereon, and the buffer material is selected from the group consisting of CeO2, Y2O3, TbOx, GaOx, YSZ, LaAlO3, SrTiO3, Gd2O3, LaNiO3, LaCuO3, NdGaO3, NdAlO3, MgO, CaF2, AlN, NbN, TiN, VN, ZrN, NiO, Ag, Al2O3, SmBa2Cu3Ox, MgF2, LaMnO3, La0.66Ca0.33MnO3, La0.66Sr0.33MnO3, La0.66Ba0.33MnO3, La2Zr2O7, Gd2Zr2O7, Ba2Zr2O7 and doped compounds thereof.