Surface plasmon enhanced light emitting diode and method of operation for the same
AssigneeCalifornia Institute of Technology
InventorsAxel Scherer, Jelena Vuckovic, Marko Loncar
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AssigneeCalifornia Institute of Technology
InventorsAxel Scherer, Jelena Vuckovic, Marko Loncar
Estimating the term…
The emission properties of light-emitting diodes are enhanced by coupling to surface plasmons. The semiconductor emitter layer of the light-emitting diode is thinner than λ/2 and is sandwiched between two metal films. A periodic pattern is defined in the top semitransparent metal layer by lithography with the result that it efficiently couples out the light emitted from the semiconductor and simultaneously enhances the spontaneous emission rate. Extraction efficiencies of up to 35% and Purcell factors of up to 4.5 are obtainable. Photoluminescence intensities of up to 46 times higher in fabricated structures compared to unprocessed wafers are obtained. The increased light emission is due to an increase in the efficiency and an increase in the pumping intensity resulting from trapping of pump photons within the microcavity.
An improvement in a light emitting diode comprising:
An improved light emitting diode comprising:
A method of improving emission from a light emitting diode comprising:
Dependencies are inferred from the claim text.