Method of modeling and controlling the endpoint of chemical mechanical polishing operations performed on a process layer, and system for accomplishing same

A method, comprising:

• providing a first semiconducting wafer having a process layer comprised of at least one of copper, aluminum and tungsten formed thereabove;
• measuring a duration of an endpoint polishing process performed on said process layer on said first wafer;
• providing a second semiconducting wafer having a process layer formed thereabove;
• and
• modifying at least one parameter of said endpoint polishing process to be performed on said process layer formed above said second semiconducting wafer based upon a variance between said determined duration of said endpoint polishing process performed on said process layer on said first wafer and a target value for said duration of said endpoint polishing process.

A method, comprising:

• providing a first semiconducting wafer having a process layer comprised of copper formed thereabove;
• measuring a duration of an endpoint polishing process performed on said process layer on said first wafer;
• providing a second semiconducting wafer having a process layer comprised of copper formed thereabove;
• and
• modifying at least one parameter of said endpoint polishing process to be performed on said process layer on said second wafer based upon a variance between said determined duration of said endpoint polishing process performed on said process layer on said first wafer and a target value for said duration of said endpoint polishing process.