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AssigneeAdvanced Technology Materials, Inc.
InventorsRobert P. Vaudo, Joan M. Redwing, Michael A. Tischler, Duncan W. Brown, Jeffrey S. Flynn
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A method of forming a (gallium, aluminum, indium) nitride base layer on a substrate for subsequent fabrication, e.g., by MOCVD or MBE, of a microelectronic device structure thereon. Vapor-phase (Ga, Al, In) chloride is reacted with a vapor-phase nitrogenous compound in the presence of the substrate, to form (Ga, Al, In) nitride. The (Ga, Al, In) nitride base layer is grown on the substrate by HVPE, to yield a microelectronic device base comprising a substrate with the (Ga, Al, In) nitride base layer thereon. The product of such HVPE process comprises a device quality, single crystal crack-free base layer of (Ga, Al, In) N on the substrate, in which the thickness of the base layer may, for example, be on the order of 2 microns and greater and the defect density of the base layer may, for example, be on the order of 1E8 cm−2 or lower. Microelectronic devices thereby may be formed on the base layer, over a substrate of a foreign (poor lattice match) material, such as sapphire. Devices which may be fabricated utilizing the HVPE base layer of the invention include light emitting diodes, detectors, transistors, and semiconductor lasers.
A base structure for fabrication of a microelectronic device structure thereon, comprising a single-crystal, crack-free base layer of (Ga, Al, In) nitride on a substrate, wherein the thickness of the base layer is at least about 10 microns, and wherein the defect density of the base layer is not greater than about 1E8 defects/cm2.
A microelectronic GaN and alloys thereof device structure, comprising a substrate, a single-crystal, crack-free base layer of GaN and alloys thereof thereon, and a GaN and alloys thereof microelectronic device or a precursor thereof on the GaN and alloys thereof base layer, optionally including at least one intermediate layer between the substrate and the single-crystal, crack-free base layer, wherein the thickness of said base layer is at least about 10 microns, and wherein the defect density of said base layer is not greater than about 1E8 defects/cm2.
A microelectronic GaN and alloys thereof device structure, comprising a substrate, a single-crystal, crack-free base layer of GaN and alloys thereof thereon, and a GaN and alloys thereof microelectronic device or a precursor thereof on the GaN and alloys thereof base layers wherein the thickness of said base layer is at least about 10 microns, and wherein the defect density of said base layer is not greater than about 1E8 defects/cm2.
Dependencies are inferred from the claim text.