Integrated impedance matching and stability network
AssigneeMotorola, Inc.
InventorsBruce Allen Bosco, Rudy M. Emrick, Steven James Franson
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Abstract
An integrated circuit for intermediate impedance matching and stabilization of high power devices is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of impedance matching and stability circuits to be placed on the same substrate as the active device. Additionally, by using the manifolds of the active to form plates of a capacitor, an impedance matching network of series inductance and shunt capacitor can be compactly fabricated for increasing the output impedance to intermediate levels. The manifolds of the active device are also used to form capacitors to provide stability to high power active devices.
Claims18
An impedance matching circuit integrated with an active device, comprising:
- a monocrystalline silicon substrate;
- an amorphous oxide material overlying a portion of the monocrystalline silicon substrate;
- a monocrystalline perovskite oxide material overlying the amorphous oxide material;
- and
- a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material;
- said active device formed within said monocrystalline compound semiconductor material;
- and
- said impedance matching circuit coupled to said active device and at least in part formed within said silicon substrate.
An impedance matching circuit and a stability circuit integrated with an active device, comprising:
- a monocrystalline silicon substrate;
- an amorphous oxide material overlying the monocrystalline silicon substrate;
- a monocrystalline perovskite oxide material overlying the amorphous oxide material;
- and
- a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material;
- said active device formed within said monocrystalline compound semiconductor material;
- said impedance matching circuit coupled to said active device and at least in part formed within said silicon substrate;
- and
- said stability circuit coupled to said impedance matching circuit.
The impedance matching circuit and stability circuit of 8 wherein said active device is a Metal-Semiconductor-Field-Effect Transistor (MESFET).
Dependencies are inferred from the claim text.