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US 6,521,920 B2Granted
Solid state image sensor
AssigneeSony Corporation
InventorHideshi Abe
Life of this patent
Estimating the term…
Abstract
A solid state image sensor is provided with a primary first-conductivity-type semiconductive region which serves as a charge storage region of a photo-sensing area and a secondary first-conductivity-type semiconductive region for enlarging a charge collecting region of the photo-sensing area.
Claims4
A solid state image sensor, comprising:
- an overflow barrier region of a second-conductivity-type semiconductor;
- a photo-sensing area of a first-conductivity-type semiconductor on said overflow barrier region;
- wherein,
- said photo-sensing area comprises a first region having a first dopant concentration, a second region under said first region having a second dopant concentration smaller than said first dopant concentration, and a third region under said second region having a third dopant concentration between said first and second depant concentrations.
1 more element
Dependencies are inferred from the claim text.