Production of single-walled carbon nanotubes by a hydrogen arc discharge method
AssigneeInstitute of Metal Research Chinese Academy of Sciences
InventorsHuiming Cheng, Chang Liu, Hongtao Cong, Min Liu, Yueying Fan, Ge Su
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Abstract
A method for producing a single-walled carbon nanotube product by a hydrogen arc discharge method includes providing an anode including graphite powder, catalyst metal, and a growth promoter in an atmosphere containing hydrogen; providing a cathode in the atmosphere; and inducing an electric arc across the anode and cathode to thereby consume the anode and produce the single-walled carbon nanotube product. Additionally, the single-walled carbon nanotube product may be soaked in an acid or an oxidative reactant and heated under vacuum to produce a hydrogen storage material.
Claims18
A method for producing a single-walled carbon nanotube product comprising:
- providing an anode at least a portion of which includes graphite powder, catalyst metal, and a growth promoter in an atmosphere containing hydrogen;
- providing a cathode in the atmosphere;
- inducing an electric arc across the anode and cathode to thereby consume the anode and produce the single-walled carbon nanotube product, wherein the growth promoter is selected from the group consisting of sulfur and a solid sulfide;
- soaking the single-walled carbon nanotube product in an acid or an oxidative reactant;
- and
- heating the soaked single-walled carbon nanotube product under vacuum to produce a hydrogen storage material.
A method for producing a single-walled carbon nanotube product comprising:
- providing an anode at least a portion of which includes graphite powder, catalyst metal, and a growth promoter in an atmosphere containing hydrogen;
- providing a cathode in the atmosphere;
- and
- inducing an electric arc across the anode and cathode to thereby consume the anode and produce the single-walled carbon nanotube product, wherein the growth promoter is selected from the group consisting of sulfur and a solid sulfide;
- wherein the cathode and a top surface of the anode are arranged at an angle with respect to one another of from 30° to 80°.
A method for producing a single-walled carbon nanotube product comprising:
- providing an anode at least a portion of which includes graphite powder, catalyst metal, and a growth promoter in an atmosphere containing hydrogen;
- providing a cathode in the atmosphere;
- and
- inducing an electric arc across the anode and cathode to thereby consume the anode and produce the single-walled carbon nanotube product,
- wherein the growth promoter is selected from the group consisting of sulfur and a solid sulfide;
- wherein the anode has a first diameter, the cathode has a second diameter smaller than the first diameter, and wherein a ratio of the first diameter to the second diameter is from 10 to 20.
A method for producing a single-walled carbon nanotube product comprising:
- providing an anode at least a portion of which includes graphite powder, catalyst metal, and a growth promoter in an atmosphere containing hydrogen;
- providing a cathode in the atmosphere;
- and
- inducing an electric arc across the anode and cathode to thereby consume the anode and produce the single-walled carbon nanotube product, wherein the growth promoter is selected from the group consisting of sulfur and a solid sulfide;
- wherein, in the step of inducing the electric arc, a direct current of 100 to 150 amps dc is applied to thereby create a plasma.
A method for producing a single-walled carbon nanotube product comprising:
- providing an anode at least a portion of which includes graphite powder, catalyst metal, and a growth promoter in an atmosphere containing hydrogen;
- providing a cathode in the atmosphere;
- and
- inducing an electric arc across the anode and cathode to thereby consume the anode and produce the single-walled carbon nanotube product, wherein the growth promoter is selected from the group consisting of sulfur and a solid sulfide;
- wherein the growth promoter is present in the portion of the anode in an amount of 0.5 to 1 atom percent.
Dependencies are inferred from the claim text.