Memory device balanced switching circuit and method of controlling an array of transfer gates for fast switching times
AssigneeMicron Technology, Inc.
InventorTroy A. Manning
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AssigneeMicron Technology, Inc.
InventorTroy A. Manning
Estimating the term…
A memory device including a balanced switching circuit and methods for controlling an array of transfer gates. The balanced switching circuit comprises a plurality of transfer gates. The plurality of transfer gates are arranged in N rows and N columns with the N transfer gates in each row connected in series between a first signal terminal and a second signal terminal. Each one of N clock terminals is coupled to a respective control terminal of only one transfer gate in each row and only one transfer gate in each column. The transfer gates are selectively clocked or activated in response to clock signals to couple the first signal terminal to the second signal terminal such that the switching speed is independent of the order in which the individual series connected pass transistors or transfer gates are activated.
A switching circuit coupling a first terminal to a second terminal, comprising a plurality of parallel switch paths coupled between the first and second terminals, each switch path having a plurality of switches coupled in series and activated in a unique activation sequence according to the logic states of clock signals applied to the switches of the switch paths, only one switch path having an activation sequence where the last switch in the series of switches of that switch path is activated subsequent to the activation of all other switches in the series.
A switching circuit for coupling a first terminal to a second terminal in response to the logic states of n clock signals, the switching circuit comprising an n x n array of switches having the switches of a row coupled in series between the first and second terminals, each switch of a row coupled to receive one of the n clock signals and, when coupling the first terminal to the second terminal, only one row of the array of switches having an activation sequence where the nth switch is activated subsequent to all other switches in the row.
A switching circuit for coupling a first terminal to a second terminal, comprising a plurality of rows, each row having a plurality of switches coupled in series between the first and second terminal, each switch in a row coupled to receive a respective clock signal and activate in response thereto, each row of switches having an activation sequence different from any other row and only one row having a sequence wherein the last switch in the row activates last when coupling the first terminal to the second terminal.
A memory device, comprising:
A method for controlling an array of transfer gates, the array including N rows and N columns, and each row having N transfer gates connected in series between first and second signal terminals, the method comprising:
A method for controlling an array of transfer gates, the array including N rows and N columns, and each row having N transfer gates connected in series between first and second signal terminals, the method comprising:
A method for controlling an array of transfer gates to electrically couple first and second signal terminals, the array including N rows and N columns, and each row having N transfer gates series connected between the first and second signal terminals, the method comprising the steps of:
A method for controlling an array of transfer gates to electrically couple first and second signal terminals, the array including N rows and N columns, and each row having N transfer gates connected in series between the first and second signal terminals, the method comprising the steps of:
Dependencies are inferred from the claim text.