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US 6,514,884 B2Granted
Method for reforming base surface, method for manufacturing semiconductor device and equipment for manufacturing the same
AssigneeSemiconductor Process Laboratory Co., Ltd.
InventorKazuo Maeda
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Abstract
The present invention relates to a method for reforming a surface of a base layer before thin film deposition, wherein a base thermal SiO2 film is exposed to a gas selected from the group consisting of AX4, AHnCl4−n and ARnX4−n, wherein A represents Si, Ge or Sn, X represents I, Br, F or Cl and R represents CmH2m+1, wherein “n” is 1, 2 or 3 and “m” is a natural number.
Claims10
A method for forming film on a base layer for a semiconductor device comprising:
- (a) reforming a surface of the base layer by contacting the surface with a reforming gas containing an inorganic silicon halogen compound to halogenate the surface and to produce an exposed halogenated surface of the base layer at which halogen is bonded to Si;
- (b) after said contacting of the surface with the reforming gas, contacting the exposed halogenated surface with a film-forming gas different from the reforming gas, said film-forming gas containing tetraethylorthosilicate and O3;
- and
- (c) forming a film on said halogenated surface by chemical vapor deposition with reaction of the tetraethylorthosilicate with the O3.
1 more element
Dependencies are inferred from the claim text.