Trench sidewall profile for device isolation
AssigneeIntel Corporation
InventorsDaniel Xu, Erman Bengu, Ming Jin
Life of this patent
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Abstract
A method comprising forming a first trench in a substrate, and forming a second trench in the substrate, the second trench intersecting the first trench and having a retrograde sidewall profile relative to a direction from a top of the trench to a bottom of the trench. An apparatus comprising a matrix of cells in a substrate formed by a plurality of first trenches and a plurality of second trenches, the plurality of second trenches intersecting the plurality of first trenches and having a retrograde sidewall profile relative to a direction from a top to a bottom of the respective trench; and an electrically accessible storage device coupled to respective ones of the matrix of cells.
Claims12
A method comprising:
- forming a first trench in a substrate;
- and
- forming a second trench in the substrate by etching the substrate with an isotropic etch chemistry, the second trench intersecting the first trench and having a retrograde sidewall profile relative to a direction from a top of the trench to a bottom of the trench.
A method comprising:
- defining a matrix of cells in a substrate by forming a plurality of first trenches and a plurality of second trenches, wherein forming the plurality of second trenches comprises etching the substrate with an isotropic etch chemistry, the plurality of second trenches intersecting the plurality of first trenches and having a retrograde sidewall profile relative to a direction from a top to a bottom of the respective trench;
- and
- electrically isolating respective ones of the matrix of cells.
Dependencies are inferred from the claim text.