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US 6,510,276 B1Granted
Highly doped fiber lasers and amplifiers
AssigneeScience & Technology Corporation @ UNM
InventorsRavinder Jain, Balaji Srinivasan, Erik Poppe
Life of this patent
Estimating the term…
Abstract
An improved highly doped waveguide is provided which comprises a waveguide having a dopant disposed therein, the dopant having a concentration of between 100 and 500,000 ppm, and wherein the concentration of the dopant enhances cross-relaxation between two elements of the dopant.
Claims80
A highly doped waveguide comprising:
- a waveguide having a dopant disposed therein, said dopant having a concentration of between 1,001 and 500,000 ppm, wherein said waveguide contains clusters of said dopant, wherein at least 50% of said dopant is in said clusters, and wherein said clusters of said dopant enhance cross-relaxation between two elements of said dopant.
A highly doped waveguide comprising:
- a waveguide having a dopant disposed therein, said dopant having a concentration of greater than 5,000 ppm and no more than 500,000 ppm;
- and
- wherein said waveguide contains clusters of said dopant and said clusters of said dopant enhance cross-relaxation between two elements of said dopant.
A highly doped waveguide comprising:
- a waveguide having a dopant disposed therein, said dopant having a concentration of between 1,001 and 500,000 ppm, said dopant being Er;
- wherein said waveguide is composed of at least one material selected from the group consisting of:
- GaN, ZnS, AlAs, GaAs, ZnSe, YLF, BaYF, ZrF4, HfF4, BaF2, SrF2, LaF3, YF3, AIF3, KF, NaF, LiF, chalcogenides, tellurides, silicates, chelates, and mixtures thereof;
- and
- wherein said waveguide contains clusters of said dopant, wherein at least 50% of said dopant is in said clusters, and wherein said clusters of said dopant enhance cross-relaxation between two elements of said dopant.
2 more elements
A highly doped waveguide comprising:
- a waveguide having a dopant disposed therein, said dopant having a concentration greater than 5,000 ppm and no more than 500,000 ppm, said dopant being Er;
- wherein said waveguide is composed of at least one material selected from the group consisting of:
- GaN, ZnS, AlAs, GaAs, ZnSe, YLF, BaYF, ZrF4, HfF4, BaF2, SrF2, LaF3, YF3, A IF3, KF, NaF, LiF, chalcogenides, tellurides, silicates, chelates, and mixtures thereof;
- and
- wherein said waveguide contains clusters of said dopant and said clusters of said dopant enhance cross-relaxation between two elements of said dopant.
2 more elements
A highly doped waveguide laser comprising:
- a low phonon energy waveguide having a dopant disposed therein, said dopant having a concentration greater than 5,000 ppm and no more than 500,000 ppm, said dopant being Er;
- a resonant cavity, said resonant cavity being defined by a first and second reflective means at an amplification wavelength and disposed at opposite ends of said waveguide;
- an energy source for injecting energy into said waveguide;
- and
- wherein said waveguide contains clusters of said dopant and said clusters of said dopant enhance cross-relaxation between two elements of said dopant.
2 more elements
A highly doped waveguide amplifier comprising:
- a low phonon energy waveguide having a dopant disposed therein, said dopant having a concentration greater than 5,000 ppm and no more than 500,000 ppm, said dopant being Er;
- an energy source for injecting energy into said waveguide and thereby forming a highly doped waveguide amplifier;
- and
- wherein said waveguide contains clusters of said dopant and said clusters of said dopant enhance cross-relaxation between two elements of said dopant.
1 more element
A highly doped waveguide amplifier comprising:
- a low phonon energy waveguide having a dopant disposed therein, said dopant having a concentration of between 1,001 and 500,000 ppm, said dopant being Er;
- an energy source for injecting energy into said waveguide and thereby forming a highly doped waveguide amplifier, wherein said waveguide contains clusters of said dopant, wherein at least 50% of said dopant is in clusters, and wherein said clusters of said dopant enhance cross-relaxation between two elements of said dopant.
A highly doped optical material comprising:
- a low phonon energy bulk material having a dopant disposed therein, said dopant having a concentration of greater than 5,000 ppm and no more than 500,000 ppm, said bulk material containing clusters of said dopant;
- and
- wherein said clusters enhance cross-relaxation between two ions of said dopant.
A highly doped bulk material laser comprising:
- a low phonon energy bulk material having a dopant disposed therein, said dopant having a concentration greater than 5,000 ppm and no more than 500,000 ppm, said bulk material containing clusters of said dopant;
- said dopant being Er;
- a resonant cavity, said resonant cavity being defined by a first and second reflective means at an amplification wavelength and disposed at two ends of said bulk material;
- an energy source for injecting energy into said bulk material, wherein said bulk material contains clusters of said dopant and said clusters of said dopant enhance cross-relaxation between two elements of said dopant.
1 more element
A highly doped bulk material amplifier comprising:
- a low phonon energy bulk material having a dopant disposed therein, said dopant having a concentration of greater than 5,000 ppm and no greater than 500,000 ppm, said dopant being Er;
- an energy source for injecting energy into said bulk material and thereby forming a highly doped bulk material amplifier, wherein said bulk material contains clusters of said dopant and said clusters of said dopant enhance cross-relaxation between two elements of said dopant.
A highly doped waveguide laser comprising:
- a low phonon energy waveguide having a dopant disposed therein, said dopant having a concentration of between 1,001 and 500,000 ppm, said dopant being Er;
- a resonant cavity, said resonant cavity being defined by a first and second reflective means at an amplification wavelength and disposed at opposite ends of said waveguide;
- an energy source for injecting energy into said waveguide;
- and
- wherein said waveguide contains clusters of said dopant, wherein at least 50% of said dopant is in said clusters, and wherein said clusters of said dopant enhance cross-relaxation between two elements of said dopant.
2 more elements
A highly doped optical material comprising:
- a low phonon energy bulk material having a dopant disposed therein, said dopant having a concentration of between 100 and 500,000 ppm, said bulk material containing clusters of said dopant, wherein at least 50% of said dopant is in said clusters and wherein said clusters enhance cross-relaxation between two ions of said dopant.
A highly doped bulk material laser comprising:
- a low phonon energy bulk material having a dopant disposed therein, said dopant having a concentration of between 100 and 500,000 ppm, said bulk material containing clusters of said dopant;
- said dopant being Er;
- a resonant cavity, said resonant cavity being defined by a first and second reflective means at an amplification wavelength and disposed at two ends of said bulk material;
- an energy source for injecting energy into said bulk material, wherein said bulk material contains clusters of said dopant wherein at least 50% of said dopant is in said clusters, and wherein said clusters of said dopant enhance cross-relaxation between two elements of said dopant.
1 more element
A highly doped bulk material amplifier comprising:
- a low phonon energy bulk material having a dopant disposed therein, said dopant having a concentration of between 100 and 500,000 ppm, said dopant being Er;
- an energy source for injecting energy into said bulk material and thereby forming a highly doped bulk material amplifier;
- wherein said bulk material contains clusters of said dopant wherein at least 50% of said dopant is in said clusters, and wherein said clusters of said dopant enhance cross-relaxation between two elements of said dopant.
Dependencies are inferred from the claim text.