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US 6,509,066 B1Granted
Sensitized photoconductive infrared detectors
AssigneeBAE Systems Information and Electronic Systems Integration Inc.
InventorSteven Jost
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Abstract
A series of processes have been discovered whereby uniform oxygen doping of lead chalcogenides have been achieved by using vapor deposition combined with in situ or ex situ ion implantation allowing the high yield manufacture of high S/N infrared detectors.
Claims16
A vacuum deposition process for forming an infrared sensitive coating comprising the steps of:
- placing a substrate comprising a major lateral surface and a source of lead chalcogenide salt in an evacuation chamber;
- heating said chamber to effect evaporation of said source;
- depositing evaporated lead chalcogenide salt on said major lateral surface to form a film;
- and
- ion implanting oxygen ions into said film, simultaneously with or subsequent to said depositing step;
- wherein said evacuation chamber is maintained at less than about 1031 7 Torr and between about 23° and about 500° C.
3 more elements
Dependencies are inferred from the claim text.