Photo-excited gas processing apparatus for semiconductor process
AssigneeTokyo Electron Limited
InventorTakeshi Sakuma
Life of this patent
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Abstract
A CVD apparatus includes a process chamber connected to a process chamber through a connection path. A window made of a light transmission material is disposed in a wall that defines the excitation chamber. A light source is disposed outside the excitation chamber to face the window. The light source irradiates a flow of a process gas with light through the window, thereby exciting the process gas. A surface purge system is arranged to supply a purge gas along the inner surface of the window. The surface purge system has a purge gas port open to the excitation chamber.
Claims20
A photo-excited gas processing apparatus for a semiconductor process, comprising:
- a process chamber configured to accommodate a target substrate;
- an excitation chamber connected to the process chamber through a connection path;
- a process gas supply system configured to supply a process gas to the process chamber through the excitation chamber, and including a process gas port open to the excitation chamber;
- an exhaust system configured to evacuate the process chamber, wherein a flow of the process gas from the process gas port to the connection path is formed in the excitation chamber by the exhaust system evacuating the process chamber;
- a window including essentially of a light transmission material and disposed in a wall that defines the excitation chamber;
- a light source disposed outside the excitation chamber to face the window, and configured to irradiate the flow of the process gas with light through the window, thereby exciting the process gas;
- and
- a surface purge system configured to supply a purge gas along an inner surface of the window, and including a purge gas port open to the excitation chamber.
A photo-assisted CVD apparatus for a semiconductor process, comprising:
- a hermetic process chamber configured to accommodate a target substrate;
- a worktable configured to support the target substrate in the process chamber;
- a hermetic excitation chamber connected to the process chamber through a connection path;
- a process gas supply system configured to supply a process gas to the process chamber through the excitation chamber, and including a process gas port open to the excitation chamber, the process gas being decomposed to provide a material of a film to be formed on the target substrate;
- an exhaust system configured to evacuate the process chamber and set the process chamber to vacuum, wherein a flow of the process gas from the process gas port to the connection path is formed in the excitation chamber by the exhaust system evacuating the process chamber;
- a window consisting essentially of a light transmission material and disposed in a wall that defines the excitation chamber;
- an ultraviolet light source disposed outside the excitation chamber to face the window, and configured to irradiate the flow of the process gas with ultraviolet rays through the window, thereby exciting the process gas;
- and
- a surface purge system configured to supply a purge gas along an inner surface of the window, and including a purge gas port open to the excitation chamber.
Dependencies are inferred from the claim text.