Semiconductor fabrication apparatus and fabrication method thereof
AssigneeApplied Materials, Inc.
InventorsKazuyoshi Saito, Youji Takagi
Life of this patent
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Abstract
An epitaxial growth system is provided with a susceptor driving mechanism for rotationally driving a susceptor in a process chamber and this susceptor driving mechanism has a support shaft coupled to the susceptor, a driven portion, and an annular member with a plurality of permanent magnets arranged outside the driven portion. The driven portion is constructed in such structure that a coating for corrosion prevention consisting of a nickel coating, a chromium coating, and a metal oxide film formed by a passivation treatment with ozone is provided on a surface of a magnetic member.
Claims11
A semiconductor fabrication apparatus comprising a process chamber into which a reactant gas is introduced and which has a pedestal for supporting an article to be processed, and a pedestal drive for rotating the pedestal,
- wherein said pedestal drive comprises a shaft member which is coupled to said pedestal and which comprises a driven portion mainly comprised of a magnetic material, and an annular member which has a plurality of magnets arranged outside the driven portion and which can rotate the driven portion,
- wherein said driven portion rotates following the rotation of said annular member and has a metal coating on a surface of said magnetic material and a metal oxide film on the metal coating.
A method of fabricating a semiconductor fabrication apparatus comprising a process chamber into which a reactant gas is introduced and which has a pedestal for supporting an article to be processed, a shaft member which is coupled to the pedestal and which has a driven portion mainly comprised of a magnetic material, and an annular member which has a plurality of magnets arranged outside the driven portion and which can impose a rotational force on the driven portion,
- wherein said driven portion rotates following the rotation of said annular member,
- said method comprising forming a metal coating on a surface of said magnetic material and further forming a metal oxide film on the metal coating.
A semiconductor fabrication apparatus comprising a process chamber into which a reactant gas is introduced and which has a pedestal for supporting an article to be processed, and a pedestal drive for rotating the pedestal,
- wherein said pedestal drive comprises a shaft member which is coupled to said pedestal and which comprises a driven portion mainly comprised of a magnetic material, and an annular member which has a plurality of magnets arranged outside the driven portion and which can impose a rotational force on the driven portion,
- wherein said driven portion rotates following the rotation of said annular member and comprises a metal coating containing at least either one of nickel and chromium and formed on a surface of said magnetic material, and a metal oxide film formed on the metal coating by reaction between the metal coating and ozone.
Dependencies are inferred from the claim text.