Liquid precursor mixtures for deposition of multicomponent metal containing materials

A process for deposition of a multiple metal or multiple metal compound layer on a substrate of an electronic material, comprising:

• a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein all said ligands of said solventless mixture are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, pyrazoles, and their fluorine, oxygen and/or nitrogen substituted analogs;
• b) delivering said solventless mixture by direct liquid injection to a flash vaporization zone to vaporize said solventless mixture;
• c) contacting said substrate under deposition conditions with a resulting vapor of said solventless mixture, and
• d) depositing a multiple metal or metal compound layer on said substrate from said solventless mixture, wherein said solventless mixture is mixed with a source of nitrogen prior to depositing said multiple metal compound layer on said substrate.

A process for deposition of a multiple metal or multiple metal compound layer on a substrate of an electronic material, comprising:

• a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein all said ligands of said solventless mixture are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, pyrazoles, and their fluorine, oxygen and/or nitrogen substituted analogs;
• b) delivering said solventless mixture to a deposition zone where said substrate is located;
• c) contacting said substrate under deposition conditions with said solventless mixture, where said contacting said substrate under deposition conditions is selected from the group consisting of chemical vapor deposition, spray pyrolysis, sol-gel processing, spin coating, atomic layer deposition and jet vapor deposition;
• and,
• d) depositing a multiple metal or metal compound layer on said substrate from said solventless mixture, wherein said solventless mixture is mixed with a source of oxygen and a source of nitrogen prior to depositing said multiple metal compound layer on said substrate to form a multiple metal oxynitride compound layer.