Semiconductor device which prevents leakage of noise generated in a circuit element forming area and which shields against external electromagnetic noise

A semiconductor device comprising:

• a semiconductor substrate having a circuit element forming area and a plurality of connection pads;
• an insulating film formed on the circuit element forming area;
• a plurality of wiring patterns which are formed on the insulating film, and which are each respectively connected to a corresponding one of the plurality of connection pads;
• a plurality of projection electrodes which are each formed in a columnar shape on a corresponding one of the plurality of wiring patterns, and which each have an exposed end face;
• and
• a ground layer formed on substantially an entire upper surface of the insulating film except for areas at which the plurality of wiring patterns are formed;
• wherein said ground layer is divided into a plurality of sections;
• wherein said plurality of connection pads include at least one connection pad connected to a ground potential;
• wherein one of said divided ground layer sections is connected to said connection pad connected to the ground potential;
• and
• wherein a ground projection electrode is provided on each of said divided ground layer sections, and each ground projection electrode is formed in a columnar shape and has an exposed end face.