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US 6,500,733 B1Granted
Synthesis of layers, coatings or films using precursor layer exerted pressure containment
AssigneeHelioVolt Corporation
InventorBilly J. Stanbery
Life of this patent
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Abstract
Systems and methods are described for synthesis of films, coatings or layers using precursor exerted pressure containment. A method includes exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.
Claims9
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- and
- moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate,
- wherein the pressure is sufficient to substantially prevent escape of vapor from the first precursor layer, the second precursor layer and the composition layer.
2 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- and
- moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate,
- wherein the composition layer includes copper, indium and selenide.
2 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- and
- moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, wherein
- a template layer is located between the first precursor layer and the first substrate;
- and
- the template layer includes copper, indium and selenide.
4 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- and
- moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate,
- wherein a diffusion barrier layer is located between the first precursor layer and the first substrate.
2 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- and
- moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate,
- wherein a diffusion barrier layer is located between the second precursor layer and the second substrate.
2 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- and
- moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, wherein
- the first precursor layer is coupled to the first substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition;
- and
- the second precursor layer is coupled to the second substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition.
4 more elements
Dependencies are inferred from the claim text.