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AssigneeTokyo Electron Limited
InventorsWilliam H. Mullee, Maximilian A. Biberger, Paul E. Schilling
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A method of removing photoresist and residue from a substrate begins by maintaining supercritical carbon dioxide, an amine, and a solvent in contact with the substrate so that the amine and the solvent at least partially dissolve the photoresist and the residue. Preferably, the amine is a tertiary amine. Preferably, the solvent is selected from the group consisting of DMSO, EC, NMP, acetyl acetone, BLO, acetic acid, DMAC, PC, and a mixture thereof. Next, the photoresist and the residue are removed from the vicinity of the substrate. Preferably, the method continues with a rinsing step in which the substrate is rinsed in the supercritical carbon dioxide and a rinse agent. Preferably, the rinse agent is selected from the group consisting of water, alcohol, a mixture thereof, and acetone. In an alternative embodiment, the amine and the solvent are replaced with an aqueous fluoride.
A method of processing a substrate comprising the steps of:
A method of removing a material from a silicon dioxide surface, the material selected from the group consisting of photoresist, photoresist residue, etch residue, and a combination thereof, the method comprising the steps of:
A method of processing a substrate comprising the steps of:
A method of processing a substrate having a material on a surface of the substrate, the material selected from the group consisting of a photoresist, a photoresist residue, an etch residue, and a combination thereof, the method comprising the steps of:
A method of processing a substrate comprising the steps of:
Dependencies are inferred from the claim text.